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HARVARD Citation
Li, B. et al. (n.d.). Growth and characteristics of p-type doped GaAs nanowire *Project supported by the National Natural Science Foundation of China (Nos. 61376019, 61504010, 61774021) and the Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Nos. IPOC2017ZT02, IPOC2017ZZ01).. Journal of semiconductors. p. . [Online].