A high repetition rate passively Q-switched microchip laser for controllable transverse laser modes. (22nd March 2016)

• Record Type: Journal Article
• Authors: Dong, Jun; Bai, Sheng-Chuang; Liu, Sheng-Hui; Ueda, Ken-Ichi; Kaminskii, Alexander A
• Is Part Of: Journal of optics. Volume 18:Number 5(2016:May)
• Publication Date: 2016-03-22
• Subjects: laser modes -- beam characteristics -- microchip laser -- passively Q-switched -- solid-state lasers -- laser-diode pumped; 42.55.Xi -- 42.60.Gd -- 42.60.Jf; Optics -- Periodicals; 535.05
• DOI: 10.1088/2040-8978/18/5/055205
• Languages: English
• ISSNs: 2040-8978

Abstract

Abstract: A Cr 4+ :YAG passively Q-switched Nd:YVO4 microchip laser for versatile controllable transverse laser modes has been demonstrated by adjusting the position of the Nd:YVO4 crystal along the tilted pump beam direction. The pump beam diameter-dependent asymmetric saturated inversion population inside the Nd:YVO4 crystal governs the oscillation of various Laguerre–Gaussian, Ince–Gaussian and Hermite–Gaussian modes. Controllable transverse laser modes with repetition rates over 25 kHz and up to 183 kHz, depending on the position of the Nd:YVO4 crystal, have been achieved. The controllable transverse laser beams with a nanosecond pulse width and peak power over hundreds of watts have been obtained for potential applications in optical trapping and quantum computation.