EPR Study of Porous Si:C and SiO2:C Layers. Issue 6 (5th January 2018)

• Record Type: Journal Article
• Authors: Savchenko, Dariya; Vasin, Andrii; Muto, Shunsuke; Kalabukhova, Ekaterina; Nazarov, Alexei
• Is Part Of: Physica status solidi. Volume 255:Issue 6(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-01-05
• Subjects: electron paramagnetic resonance -- interface defects -- porous silicon -- Si:C layers -- SiO2:C layers; Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201700559
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : Initial porous silicon (por‐Si), carbonized porous silicon (por‐Si:C), and carbon‐incorporated porous silicon oxide (por‐SiO2 :C) layers are studied by electron paramagnetic resonance (EPR) at T = 10–13 K. Scanning transmission electron microscopy and electron energy loss (EEL) spectroscopy show that por‐Si:C and por‐SiO2 :C layers have a highly disordered structure with mixing sp 2 and sp 3 CC bonds. In the por‐SiO2 :C layers, the peak of the oxygen bonded to carbon in the form of hydroxyl groups is found in the EEL spectrum of the C K‐edge region. Low‐intensity signals of Lorentzian lineshape are detected in the EPR spectrum of por‐Si, por‐Si:C, por‐SiO2 :C layers. One of them is attributed to the Pb0 defect at the Si/SiO2 interface of nanocrystalline grain and the second to the silicon dangling bonds (SiDB) localized in nanocrystalline Si. The carbonization of por‐Si layers and subsequent oxidation of por‐Si:C gives rise to the appearance of additional EPR signals of high intensity at g = 2.0035(3) in por‐Si:C and at g = 2.0030(3) in por‐SiO2 :C, which are assigned to carbon‐related defects (CRD) and carbon clusters, correspondingly. It was found that predominant defect types in por‐Si:C and por‐SiO2 :C layers are CRD and carbon clusters, respectively, while the spin concentration of Pb0 interface defects and SiDB is low. Abstract : Three electron paramagnetic resonance (EPR) signals, due to the Pb0 defect at the Si/SiO2 interface, silicon dangling bonds (SiDB), and carbon‐related defect (CRD), respectively, were observed in carbonized porous silicon (por‐Si:C). The oxidation of por‐Si:C gives rise to the formation of carbon clusters and the decrease of CRD spin concentration thanks to the formation of COH carboxylic groups.