Engineering electrical transport in α-MgAgSb to realize high performances near room temperature. Issue 24 (8th June 2018)

• Record Type: Journal Article
• Authors: Lei, Jingdan; Zhang, De; Guan, Weibao; Cheng, Zhenxiang; Wang, Chao; Wang, Yuanxu
• Is Part Of: Physical chemistry chemical physics. Volume 20:Issue 24(2018)
• Page Start: 16729
• Page End: 16735
• Publication Date: 2018-06-08
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/c8cp02186d
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : Realizing high performances of α-MgAgSb near room temperature by engineering electrical transport through manipulating a spark plasma sintering system. Abstract : α-MgAgSb shows promise as a potential new low-temperature thermoelectric (TE) material and has been widely researched recently. We explored the effects of sintering conditions on the properties of MgAgSb-based thermoelectric materials through manipulating a spark plasma sintering system (SPS), where Ag vacancies and Mg point defects play a dominant role. The transport properties of MgAgSb were optimized effectively and efficiently, especially for electrical transport. As a result, we obtained a steady power factor (PF) of ∼17 μW cm −1 K −2, owing to the optimal carrier concentration of 9.8 × 10 19 cm −3 . Additionally, α-MgAgSb exhibits an ultralow lattice thermal conductivity of around 0.45 Wm −1 K −1 at 375 K. More importantly, a high ZT value of 0.85 was achieved below 375 K, approaching room temperature.