Accessing new 2D semiconductors with optical band gap: synthesis of iron-intercalated titanium diselenide thin films via LPCVD. Issue 40 (20th June 2018)

• Record Type: Journal Article
• Authors: Sanchez-Perez, Clara; Knapp, Caroline E.; Colman, Ross H.; Sotelo-Vazquez, Carlos; Oilunkaniemi, Raija; Laitinen, Risto S.; Carmalt, Claire J.
• Is Part Of: RSC advances. Volume 8:Issue 40(2018)
• Page Start: 22552
• Page End: 22558
• Publication Date: 2018-06-20
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c8ra03174f
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : Fe-doped TiSe2 thin-films were synthesized via low pressure chemical vapor deposition (LPCVD) of a single source precursor: [Fe(η 5 -C5 H4 Se)2 Ti(η 5 -C5 H5 )2 ]2 (1 ). Abstract : Fe-doped TiSe2 thin-films were synthesized via low pressure chemical vapor deposition (LPCVD) of a single source precursor: [Fe(η 5 -C5 H4 Se)2 Ti(η 5 -C5 H5 )2 ]2 (1 ). Samples were heated at 1000 °C for 1–18 h and cooled to room temperature following two different protocols, which promoted the formation of different phases. The resulting films were analyzed by grazing incidence X-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM) and UV/vis spectroscopy. An investigation of the Fe doping limit from a parallel pyrolysis study of Fe x TiSe2 powders produced in situ during LPCVD depositions has shown an increase in the Fe–TiSe2 –Fe layer width with Fe at% increase. Powders were analyzed using powder X-ray diffraction (PXRD) involving Rietveld refinement and XPS. UV/vis measurements of the semiconducting thin films show a shift in band gap with iron doping from 0.1 eV (TiSe2 ) to 1.46 eV (Fe0.46 TiSe2 ).