Fabrication of flexible organic thin-film transistors based on negative acting photosensitive novolak polymer as an organic gate insulator. (24th March 2018)

• Record Type: Journal Article
• Authors: Xie, Yingtao; Wang, Dongping; Cui, Wei; Wang, Lu; Guan, Chun; Chen, Guoping; He, Feng
• Is Part Of: Molecular crystals and liquid crystals. Volume 664(2018)
• Page Start: 135
• Page End: 141
• Publication Date: 2018-03-24
• Subjects: Novolak -- organic gate insulator -- organic thin-film transistors; Molecular crystals -- Periodicals; Liquid crystals -- Periodicals; Liquid crystals; Molecular crystals; Periodicals; 548
• DOI: 10.1080/15421406.2018.1461178
• Languages: English
• ISSNs: 1542-1406

Abstract

ABSTRACT: A diazonaphthoquinone (DNQ)-based cross-linkable photo-sensitive cresol novolak resin through acid-catalyzed condensation with melamine molecules is presented as an organic gate insulator (OGI) for the fabrication of poly(3-hexylthiophene) thin-film transistors. This novolak OGI exhibits a remarkably smooth surface of Ra 1.0 nm and RMS 0.3 nm and shows excellent chemical resistance against common process solvents upon a post exposure bake ≥150°C. The corresponding metal-insulator-metal diode incorporated with a 200 nm thick OGI demonstrates remarkable low leakage current level of 10 pA/cm 2 @3 MV/cm. Bottom-contact poly(3-hexylthiophene) (P3HT) transistors with novolak OGI on both rigid glass and flexible polyethylene terephthalate (PET) plastic substrates are further demonstrated, suggesting that novolak polymer is a promising candidate for realizing a high performance OGI at low processing temperature.