Cite
HARVARD Citation
Zhang, X. et al. (2018). Characteristics of AlGaN-based deep ultraviolet light-emitting diodes with a hole strengthened-injection layer. Journal of modern optics. 65 (14), pp. 1705-1710. [Online].
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Zhang, X. et al. (2018). Characteristics of AlGaN-based deep ultraviolet light-emitting diodes with a hole strengthened-injection layer. Journal of modern optics. 65 (14), pp. 1705-1710. [Online].