Effect of rapid thermal annealing on InP1−xBix grown by molecular beam epitaxy. (7th July 2015)

• Record Type: Journal Article
• Authors: Wu, X Y; Wang, K; Pan, W W; Wang, P; Li, Y Y; Song, Y X; Gu, Y; Yue, L; Xu, H; Zhang, Z P; Cui, J; Gong, Q; Wang, S M
• Is Part Of: Semiconductor science and technology. Volume 30:Number 9(2015:Sep.)
• Publication Date: 2015-07-07
• Subjects: InPBi -- dilute bismides -- thermal annealing -- photoluminescence -- deep level -- thermal stability; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/9/094014
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: The effect of post-growth rapid thermal annealing on structural and optical properties of InP1−x Bix thin films was investigated. InPBi shows good thermal stability up to 500 °C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 °C. The InPBi sample annealed at 800 °C shows an unexpected PL spectrum with different energy transitions.