Ionisation response in semiconductor structures exposed to the X-ray radiation of a femtosecond laser-plasma source. (July 2017)

• Record Type: Journal Article
• Authors: Chumakov, A.I.; Belova, M.P.; Kessarinsky, L.N.; Borisov, A.Ya.; Ivanov, K.A.; Tsymbalov, I.N.; Volkov, R.V.; Savel'ev, A.B.; Galanina, L.I.; Chirskaya, N.P.; Novikov, L.S.
• Is Part Of: Quantum electronics. Volume 47:Number 6(2017)
• Page Start: 528
• Page End: 532
• Publication Date: 2017-07
• Subjects: X-ray radiation -- femtosecond laser plasma -- single event effects -- semiconductor devices; Quantum electronics -- Periodicals; 537.5
• DOI: 10.1070/QEL16364
• Languages: English
• ISSNs: 1063-7818

Abstract

Abstract: The possibilities of applying a femtosecond laser-plasma source of X-ray radiation for modelling the effect of single nuclear particles based on the principle of equivalent charge generation are analysed. The parameters of femtosecond X-ray radiation for the experimental modelling of individual radiation effects are validated. The experimental setup forming the X-ray radiation is described. The results of comparative ionisation response modelling in simple electronic devices using the FLUKA and FEANT codes are presented.