A new geometrical approach for rapid LED processing by using femtosecond laser. (November 2015)

• Record Type: Journal Article
• Authors: Reklaitis, I.; Grinys, T.; Tomašiūnas, R.; Puodžiūnas, T.; Mažulė, L.; Sirutkaitis, V.; Lin, C.H.; Yang, C.C.
• Is Part Of: Optics and lasers in engineering. Volume 74(2015)
• Page Start: 17
• Page End: 21
• Publication Date: 2015-11
• Subjects: Femtosecond laser -- Processing -- Trench -- Light-emitting diode -- GaN; Lasers in engineering -- Periodicals; Optical measurements -- Periodicals; Optics -- Periodicals; Lasers en ingénierie -- Périodiques; Mesures optiques -- Périodiques; Optique -- Périodiques; 621.36605
• DOI: 10.1016/j.optlaseng.2015.05.002
• Languages: English
• ISSNs: 0143-8166

Abstract

Abstract: A new original method to reduce time and resource consuming photolithography mask production operations has been suggested. By means of femtosecond laser direct writing, thus, gaining cleaner surrounding than for nano- and pico-second pulse processing, a 45° angle ablation geometry has been proven. LED chip separation trenches and n -GaN layer exposure were made simultaneously saving from one fundamental processing and alignment step without adverse effect from the laser-processing on the quantum well region. Abstract : Highlights: 45° ablation led to a simple, rapid and accurate fs laser LED׳s processing method. A LED technology with reduced processing and critical alignment steps. LED chip separation trenches and n-GaN layer exposure were made simultaneously.