Flexible solution-processed high-voltage organic thin film transistor. Issue 2 (23rd November 2017)

• Record Type: Journal Article
• Authors: Shih, Andy; Schell, Elizabeth; Akinwande, Akintunde Ibitayo
• Is Part Of: Journal of materials research. Volume 33:Issue 2(2018)
• Page Start: 149
• Page End: 160
• Publication Date: 2017-11-23
• Subjects: thin film, -- organic, -- ssolution deposition; Materials -- Research -- Periodicals; 620.1105
• DOI: 10.1557/jmr.2017.428
• Languages: English
• ISSNs: 0884-2914

Abstract

Abstract: Abstract : 6, 13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) and pentacene-based high-voltage organic thin film transistors (HVOTFTs) have been fabricated on solid and flexible substrates via a low-temperature (<100 °C) solution-processed and vacuum-deposited fabrication method. A high- k dielectric Bi1.5 Zn1 Nb1.5 O7 and an organic dielectric parylene-C have been incorporated into the transistor design. The reliability of the HVOTFTs was analyzed under flexure, where a nonsaturating I – V characteristic behavior was observed. Here, the HVOTFT exhibited a mobility μ of 0.018 cm 2 /(V s) and a large breakdown voltage of | V DS | > 120 V and >550 V for TIPS-pentacene and pentacene devices, respectively. The large breakdown voltages are attributed to an organic semiconductor channel region which is partially gated, allowing for a large potential drop. Thiolphenol-based SAMs were used to help improve charge injection. Electrical measurements were also performed with samples designed with a top metal field plate to improve control of the charge carrier within the channel.