Enhancing the field emission properties of Se-doped GaN nanowires. (20th May 2016)

• Record Type: Journal Article
• Authors: Li, Enling; Wu, Guishuang; Cui, Zhen; Ma, Deming; Shi, Wei; Wang, Xiaolin
• Is Part Of: Nanotechnology. Volume 27:Number 26(2016)
• Publication Date: 2016-05-20
• Subjects: GaN nanowire -- Se-doped -- field emission -- work function; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/27/26/265707
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Pure and Se-doped GaN nanowires (NWs) are synthesized on Pt-coated Si(111) substrates via chemical vapor deposition. The GaN NWs exhibit a uniform density with an average diameter of 20–120 nm. The structure of the NWs is wurtzite hexagonal, and the growth direction is along [0001]. Field emission measurements show that the Se-doped GaN NWs possess a low turn-on field (2.9 V μ m −1 ) compared with the pure GaN NWs (7.0 V μ m −1 ). In addition, density functional theory calculations indicate that the donor states near the Fermi level are mainly formed through the hybridization between Se 4p and N 2p orbitals and that the Fermi level move towards the vacuum level. Consequently, the work functions of Se-doped GaN NWs are lower than those of pure GaN NWs.