Cite
HARVARD Citation
Wang, S. et al. (2018). Electrical stress probing recovery efficiency of 28 nm HK/MG nMOSFETs using decoupled plasma nitridation treatment. Vacuum. pp. 117-121. [Online].
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Wang, S. et al. (2018). Electrical stress probing recovery efficiency of 28 nm HK/MG nMOSFETs using decoupled plasma nitridation treatment. Vacuum. pp. 117-121. [Online].