The surface electronic structure of silicon terminated (100) diamond. (23rd May 2016)

• Record Type: Journal Article
• Authors: Schenk, A K; Tadich, A; Sear, M J; Qi, D; Wee, A T S; Stacey, A; Pakes, C I
• Is Part Of: Nanotechnology. Volume 27:Number 27(2016)
• Publication Date: 2016-05-23
• Subjects: NV centres -- ARPES -- diamond; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/27/27/275201
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: A combination of synchrotron-based x-ray spectroscopy and contact potential difference measurements have been used to examine the electronic structure of the (3 × 1) silicon terminated (100) diamond surface under ultra high vacuum conditions. An occupied surface state which sits 1.75 eV below the valence band maximum has been identified, and indications of mid-gap unoccupied surface states have been found. Additionally, the pristine silicon terminated surface is shown to possess a negative electron affinity of −0.86 ± 0.1 eV.