Development of a novel wafer-probe for in situ measurements of thin film properties. (19th May 2015)

• Record Type: Journal Article
• Authors: el Otell, Z; Marinov, D; Šamara, V; Bowden, M D; de Marneffe, J-F; Verdonck, P; St J Braithwaite, N
• Is Part Of: Plasma sources science & technology. Volume 24:Number 3(2015:Jun.)
• Publication Date: 2015-05-19
• Subjects: wafer probe -- in-situ diagnostics -- low-k dielectrics -- plasma induced damage; Plasma (Ionized gases) -- Periodicals; 530.44
• DOI: 10.1088/0963-0252/24/3/032002
• Languages: English
• ISSNs: 0963-0252

Abstract

Abstract: We report a new development of a diagnostic technique, referred to as the wafer probe, which enables us to qualitatively monitor the plasma-induced changes in thin film dielectrics, in-situ and in real time. The wafer probe is an adaptation of the well-established ion flux probe technique, also known as RF biased or pulse biased planar Langmuir probe. This technique utilises the top surface of a tile cut from a multi-layer wafer as the probing area. This technique was successfully used to characterise different plasma conditions and monitor the plasma-induced changes in the thin layers of the tile, e.g. a porous organosilicate-glass low- κ dielectrics. The wafer probe was used to monitor the different effects of an argon and a hydrogen plasma on low- κ dielectrics, as well as to monitor the etch rate and endpoint of an Ar/SF6 plasma.