Non‐isothermal crystallization kinetics of Al2O3‐YAG amorphous ceramic coating deposited via plasma spraying. Issue 7 (6th February 2018)

• Record Type: Journal Article
• Authors: Rong, Jian; Yang, Kai; Zhuang, Yin; Zhong, Xinghua; Zhao, Huayu; Ni, Jinxing; Tao, Shunyan; Wang, Liang; Ding, Chuanxian
• Is Part Of: Journal of the American Ceramic Society. Volume 101:Issue 7(2018)
• Page Start: 2888
• Page End: 2900
• Publication Date: 2018-02-06
• Subjects: Al2O3‐YAG -- amorphous ceramic coating -- crystallization kinetic -- non‐isothermal method -- thermal stability; Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.15440
• Languages: English
• ISSNs: 0002-7820

Abstract

Abstract: Crystallization kinetics of the newly developed Al2 O3 ‐Y3 Al5 O12 (YAG) amorphous ceramic coating fabricated by atmospheric plasma spraying (APS) were investigated via differential scanning calorimetry (DSC) under non‐isothermal conditions. The phase compositions and microstructure of the as‐sprayed coating were characterized by X‐ray diffraction (XRD) and Scanning electron microscopy (SEM). The glass transition temperature T g, the onset temperature of crystallization T c and the peak temperature of crystallization T p presented heating rate dependence. The related kinetic parameters of activation energies ( E g, E c, E p ) and Avrami exponents ( n ) were quantified using various methods including Kissinger, Augis–Bennett, Ozawa and Matusita–Sakka, etc., to understand the phase transition mechanism and crystallization process in depth. A series of parameters including devitrification interval Δ T, thermal stability ( T c, E c ), nucleation resistance E c / RT g and fragility index F were quantified in order to evaluate the nucleation mechanism, crystallization behavior and thermal stability of Al2 O3 ‐YAG amorphous ceramic coating. Excellent thermal stability was witnessed in the studied coating. Furthermore, the YAG crystalline phases can be reasonably controlled and independently precipitated from the amorphous matrix via proper annealing.