High on/off ratio photosensitive field effect transistors based on few layer SnS2. (15th July 2016)

• Record Type: Journal Article
• Authors: Liu, Jianzhe; Xia, Congxin; Li, Honglai; Pan, Anlian
• Is Part Of: Nanotechnology. Volume 27:Number 34(2016)
• Publication Date: 2016-07-15
• Subjects: SnS2 -- nanosheets -- high on/off ratio -- field effect transistors; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/27/34/34LT01
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: 2D layered SnS2 nanosheets have attracted increasing research interest due to their highly anisotropic structural, electrical, optical, and mechanical properties. Here, through mechanical exfoliation, few-layer SnS2 was obtained from as-synthesized many-layered bulk SnS2 . Micro-characterization and Raman study demonstrate the hexagonal symmetry structure of the nanosheets so fabricated. The energy band structures of both SnS2 bulk and monolayer were investigated comparatively. A highly photosensitive field effect transistor based on the obtained few-layer SnS2 nanosheets was fabricated, which shows a high I photo / I dark ratio of 10 3, and keeps the responsivity and external quantum efficiency ( EQE ) at a realistic level of 8.5 A W −1 and 1.2 × 10 3 % respectively. This 2D structured high on/off ratio photosensitive field effect device may find promising potential applications in functional electronic/optoelectronic devices or systems.