Accelerating the oxidation rate of AlN substrate through the addition of water vapor*. Issue 4 (1st December 2017)

• Record Type: Journal Article
• Authors: Yeh, Chun-Ting; Tuan, Wei-Hsing
• Is Part Of: Journal of Asian ceramic societies. Volume 5:Issue 4(2017)
• Page Start: 381
• Page End: 384
• Publication Date: 2017-12-01
• Subjects: Aluminum nitride -- Oxidation -- Thermal conductivity -- Microstructure; Ceramics -- East Asia -- Periodicals; Materials science -- Periodicals; 620.1405
• DOI: 10.1016/j.jascer.2017.08.001
• Languages: English
• ISSNs: 2187-0764

Abstract

Abstract: To apply a pre-oxidation treatment on aluminum nitride (AlN) substrate is a common practice before its metallization. In the present study, the microstructure of AlN after oxidation either in dry air or in wet air is characterized. The resulting thermal conductivity is measured. With or without the presence of water vapor, the oxidation of AlN is a reaction-dominating process. The addition of water vapor speeds up the oxidation rate by one order of magnitude. The surface oxide layer is full of nano-sized pores. The presence of surface oxide reduces the thermal conductivity by ∼15% when the thickness of oxide layer is only 3 μm.