Spin polarized surface resonance bands in single layer Bi on Ge(1 1 1). (13th April 2016)

• Record Type: Journal Article
• Authors: Bottegoni, F; Calloni, A; Bussetti, G; Camera, A; Zucchetti, C; Finazzi, M; Duò, L; Ciccacci, F
• Is Part Of: Journal of physics. Volume 28:Number 19(2016)
• Publication Date: 2016-04-13
• Subjects: spintronics -- spin–orbit interaction -- spin orbit field -- non-magnetic heavy metal-semiconductor junction; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/0953-8984/28/19/195001
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: The spin features of surface resonance bands in single layer Bi on Ge(1 1 1) are studied by means of spin- and angle-resolved photoemission spectroscopy and inverse photoemission spectroscopy. We characterize the occupied and empty surface states of Ge(1 1 1) and show that the deposition of one monolayer of Bi on Ge(1 1 1) leads to the appearance of spin-polarized surface resonance bands. In particular, the C 3v symmetry, which Bi adatoms adopt on Ge(1 1 1), allows for the presence of Rashba-like occupied and unoccupied electronic states around the M ¯ point of the Bi surface Brillouin zone with a giant spin–orbit constant | α R | = ( 1.4 ± 0.1 ) eV · Å.