Phase control of group velocity of light in an InGaN/GaN quantum dot nanostructure. (September 2015)

• Record Type: Journal Article
• Authors: Jafarzadeh, H.; Ahmadi Sangachin, E.; Hossein Asadpour, Seyyed
• Is Part Of: Quantum electronics. Volume 45:Number 9(2015)
• Page Start: 837
• Page End: 843
• Publication Date: 2015-09
• Subjects: 42.50.Ct -- 42.50.Gy -- 68.65.Hb; group velocity -- relative phase -- quantum dot nanostructure; Quantum electronics -- Periodicals; 537.5
• DOI: 10.1070/QE2015v045n09ABEH015677
• Languages: English
• ISSNs: 1063-7818

Abstract

Abstract: By solving self-consistently Schrödinger – Poisson equations for a carrier in the conduction band of an InGaN/GaN quantum dot, a four-level quantum system is described. It is found that in the presence of terahertz signal radiation, the medium becomes phase dependent, which ensures the phase control of the group velocity of a weak probe pulse from slow to fast light.