Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%. (September 2017)

• Record Type: Journal Article
• Authors: Ladugin, M.A.; Marmalyuk, A.A.; Padalitsa, A.A; Telegin, K.Yu.; Lobintsov, A.V.; Sapozhnikov, S.M.; Danilov, A.I.; Podkopaev, A.V.; Simakov, V.A.
• Is Part Of: Quantum electronics. Volume 47:Number 8(2017)
• Page Start: 693
• Page End: 695
• Publication Date: 2017-09
• Subjects: laser diode arrays -- efficiency -- quantum-well heterostructures -- MOCVD -- AlGaAs/GaAs; Quantum electronics -- Periodicals; 537.5
• DOI: 10.1070/QEL16441
• Languages: English
• ISSNs: 1063-7818

Abstract

Abstract: The results of development of quasi-cw laser diode arrays operating at a wavelength of 808 nm with a high efficiency are demonstrated. The laser diodes are based on semiconductor AlGaAs/GaAs quantum-well heterostructures grown by MOCVD. The measured spectral, spatial, electric and power characteristics are presented. The output optical power of the array with an emitting area of 5 × 10 mm is 2.7 kW at a pump current of 100 A, and the maximum efficiency reaches 62%.