High-temperature dielectric responses in all-nanosheet capacitors. (1st June 2017)

• Record Type: Journal Article
• Authors: Khan, Muhammad Shuaib; Osada, Minoru; Kim, Hyung-Jun; Ebina, Yasuo; Sugimoto, Wataru; Sasaki, Takayoshi
• Is Part Of: Japanese journal of applied physics. Volume 56:Number 6(2017)Supplement 1
• Publication Date: 2017-06-01
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.56.06GH09
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We have investigated high-temperature dielectric responses of layer-by-layer assembled nanosheet capacitors. All-nanosheet capacitors are fabricated by stacking metallic Ru0.95 O2 as electrodes and dielectric Ca2 Nb3 O10 nanosheets as insulators. Through in situ characterizations, we find that all-nanosheet capacitors exhibit a size-free high- k dielectric response (∼155) and a moderate insulation resistance (∼1 × 10 −5 A/cm 2 ) at high temperatures up to 200 °C. The concomitant presence of high εr, low leakage profile, and thermal stability in high- k nanocapacitors is critically important for application in high-temperature electronics.