Charge transfer driven emergent phenomena in oxide heterostructures. (18th May 2017)

• Record Type: Journal Article
• Authors: Chen, Hanghui; Millis, Andrew
• Is Part Of: Journal of physics. Volume 29:Number 24(2017)
• Publication Date: 2017-05-18
• Subjects: transition metal oxides -- first-principles calculations -- strong correlation; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/1361-648X/aa6efe
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: Complex oxides exhibit many intriguing phenomena, including metal-insulator transition, ferroelectricity/multiferroicity, colossal magnetoresistance and high transition temperature superconductivity. Advances in epitaxial thin film growth techniques enable us to combine different complex oxides with atomic precision and form an oxide heterostructure. Recent theoretical and experimental work has shown that charge transfer across oxide interfaces generally occurs and leads to a great diversity of emergent interfacial properties which are not exhibited by bulk constituents. In this report, we review mechanisms and physical consequence of charge transfer across interfaces in oxide heterostructures. Both theoretical proposals and experimental measurements of various oxide heterostructures are discussed and compared. We also review the theoretical methods that are used to calculate charge transfer across oxide interfaces and discuss the success and challenges in theory. Finally, we present a summary and perspectives for future research.