T-CAD analysis of electric fields in n-in-p silicon strip detectors in dependence on the p-stop pattern and doping concentration. (28th January 2015)

Record Type:: Journal Article
Title:: T-CAD analysis of electric fields in n-in-p silicon strip detectors in dependence on the p-stop pattern and doping concentration. (28th January 2015)
Main Title:: T-CAD analysis of electric fields in n-in-p silicon strip detectors in dependence on the p-stop pattern and doping concentration
Authors:: Printz, M.
Abstract:
Is Part Of:: Journal of instrumentation. Volume 10:Number 1(2015:Jan.)
Journal:: Journal of instrumentation
Issue:: Volume 10:Number 1(2015:Jan.)
Issue Display:: Volume 10, Issue 1 (2015)
Year:: 2015
Volume:: 10
Issue:: 1
Issue Sort Value:: 2015-0010-0001-0000
Page Start:: C01048
Page End:: C01048
Publication Date:: 2015-01-28
Subjects:: Scientific apparatus and instruments -- Periodicals
502.84
Journal URLs:: http://iopscience.iop.org/1748-0221 ↗
http://ioppublishing.org/ ↗
DOI:: 10.1088/1748-0221/10/01/C01048 ↗
Languages:: English
ISSNs:: 1748-0221
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store
Ingest File:: 6514.xml