Vertical Organic–Inorganic Hybrid Perovskite Schottky Junction Transistors. (22nd March 2018)

• Record Type: Journal Article
• Authors: Yu, Hyeonggeun; Cheng, Yuanhang; Shin, Donghun; Tsang, Sai‐Wing; So, Franky
• Is Part Of: Advanced Electronic Materials. Volume 4:Number 5(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-03-22
• Subjects: organic–inorganic hybrid perovskite -- patterned electrodes -- Schottky junctions -- vertical transistors; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201800039
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: While organolead halide perovskite materials have attracted considerable attention for high efficiency solar cells, they have shown little potential for use in field‐effect transistors (FETs) due to the limited current modulation at room temperature. Here, by developing a vertically gated methylammonium lead iodide (MAPbI3 )/indium‐tin oxide (ITO) Schottky junction, a room temperature‐operable vertical MAPbI3 thin‐film transistor is reported. Due to the injection‐controlled gating mechanism as well as the vertical channel structure, a current modulation ratio up to 10 4 is achieved. Fabrication of a nanoporous ITO source electrode forming a highly rectifying Schottky junction with the MAPbI3 layer is the key for the large current modulation. It is discovered that the electron transporting layers on top of the MAPbI3 layer play an important role in achieving a large current rectification of 10 7 at the Schottky junction and hence large current on/off ratios of the resulting transistor. Abstract : By developing a vertically gated methylammonium lead iodide (MAPbI3 )/indium‐tin oxide Schottky junction, a room temperature‐operable vertical MAPbI3 transistor is demonstrated . Due to the injection‐controlled gating mechanism and the short vertical channel structure, a current on/off ratio up to 10 4 could be achieved. The electron transporting layers on the MAPbI3 layer play a critical role for the current modulation.