Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates. (19th April 2017)

• Record Type: Journal Article
• Authors: Puybaret, Renaud; Rogers, David J; Gmili, Youssef El; Sundaram, Suresh; Jordan, Matthew B; Li, Xin; Patriarche, Gilles; Teherani, Ferechteh H; Sandana, Eric V; Bove, Philippe; Voss, Paul L; McClintock, Ryan; Razeghi, Manijeh; Ferguson, Ian; Salvestrini, Jean-Paul; Ougazzaden, Abdallah
• Is Part Of: Nanotechnology. Volume 28:Number 19(2017)
• Publication Date: 2017-04-19
• Subjects: InGaN -- nano selective area growth—NSAG -- metal organic vapor phase epitaxy—MOVPE -- zinc oxide—ZnO; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aa6a43
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Nanoselective area growth (NSAG) by metal organic vapor phase epitaxy of high-quality InGaN nanopyramids on GaN-coated ZnO/c-sapphire is reported. Nanopyramids grown on epitaxial low-temperature GaN-on-ZnO are uniform and appear to be single crystalline, as well as free of dislocations and V-pits. They are also indium-rich (with homogeneous 22% indium incorporation) and relatively thick (100 nm). These properties make them comparable to nanostructures grown on GaN and AlN/Si templates, in terms of crystallinity, quality, morphology, chemical composition and thickness. Moreover, the ability to selectively etch away the ZnO allows for the potential lift-off and transfer of the InGaN/GaN nanopyramids onto alternative substrates, e.g. cheaper and/or flexible. This technology offers an attractive alternative to NSAG on AlN/Si as a platform for the fabrication of high quality, thick and indium-rich InGaN monocrystals suitable for cheap, flexible and tunable light-emitting diodes.