Experimental investigations on nanogrinding of RB-SiC wafers. Issue 9 (4th July 2018)

• Record Type: Journal Article
• Authors: Feng, Guang; Liu, Qiuzu; Guo, Wenliang; Xin, Yupeng; Liang, Qunlong
• Is Part Of: Materials and manufacturing processes. Volume 33:Issue 9(2018)
• Page Start: 1030
• Page End: 1035
• Publication Date: 2018-07-04
• Subjects: Diamond -- efficiency -- mechanism -- nanogrinding -- removal -- surface -- topography -- wafer; Manufacturing processes -- Periodicals; Materials -- Periodicals; Manufactured Materials; 670.5
• DOI: 10.1080/10426914.2018.1424906
• Languages: English
• ISSNs: 1042-6914

Abstract

ABSTRACT: Nanogrinding experiments are performed to investigate the processing characteristics and material removal mechanism of reaction-bonded silicon carbide (RB-SiC) wafers on an ultraprecision grinder using the cup wheel. #120, #600 diamond wheels are used as coarse and semifinished grinding wheels, while #2000 and #12000 diamond wheels are selected as fine and finish grinding wheels, respectively. The experimental results indicate that an ultrasmooth surface with roughness value R a less than 3 nm and groove depth about 5 nm can be achieved using a diamond wheel whose mesh size exceeds 2000. In addition, R a less than 1 nm and groove depth about 2 nm will be obtained with a #12000 diamond wheel. The present study reveals the feasibility of ultraprecision grinding RB-SiC materials in the ductile regime and provides technological insights into nanogrinding of hard materials with an ultrasmooth surface.