Oxygen vacancies on the surface of HxWO3−y for enhanced charge storage. Issue 16 (5th April 2018)

• Record Type: Journal Article
• Authors: Wang, Haiyan; Fan, Ruxue; Miao, Jingyu; Chen, Jiayi; Mao, Shanjun; Deng, Jiang; Wang, Yong
• Is Part Of: Journal of materials chemistry. Volume 6:Issue 16(2018)
• Page Start: 6780
• Page End: 6784
• Publication Date: 2018-04-05
• Subjects: Materials -- Research -- Periodicals; Chemistry, Analytic -- Periodicals; Environmental sciences -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c8ta00981c
• Languages: English
• ISSNs: 2050-7488

Abstract

Abstract : The dominant role of surface oxygen vacancies (OVs) in improving energy storage is underscored by comparing the OV-mediated charge storage performance of surface and bulk defective H x WO3− y with that of WO3 and bulk defective e-H x WO3− y . Abstract : The dominant role of surface oxygen vacancies (OVs) in improving energy storage is underscored by comparing the OV-mediated charge storage performance of surface and bulk defective H x WO3− y with that of WO3 and bulk defective e-H x WO3− y . It shows that surface OVs are key hot spots for faradaic reactions in H x WO3− y, which promotes the formation of certain W 5+ and W 4+ during the reduction process.