Vertical ZnO Nanotube Transistor on a Graphene Film for Flexible Inorganic Electronics. Issue 17 (3rd April 2018)

• Record Type: Journal Article
• Authors: Oh, Hongseok; Park, JunBeom; Choi, Woojin; Kim, Heehun; Tchoe, Youngbin; Agrawal, Arpana; Yi, Gyu‐Chul
• Is Part Of: Small. Volume 14:Issue 17(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-04-03
• Subjects: 1D–2D hybrid materials -- flexible electronics -- graphene -- vertical transistors -- ZnO; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201800240
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract: The bottom‐up integration of a 1D–2D hybrid semiconductor nanostructure into a vertical field‐effect transistor (VFET) for use in flexible inorganic electronics is reported. Zinc oxide (ZnO) nanotubes on graphene film is used as an example. The VFET is fabricated by growing position‐ and dimension‐controlled single crystal ZnO nanotubes vertically on a large graphene film. The graphene film, which acts as the substrate, provides a bottom electrical contact to the nanotubes. Due to the high quality of the single crystal ZnO nanotubes and the unique 1D device structure, the fabricated VFET exhibits excellent electrical characteristics. For example, it has a small subthreshold swing of 110 mV dec −1, a high I max / I min ratio of 10 6, and a transconductance of 170 nS µm −1 . The electrical characteristics of the nanotube VFETs are validated using 3D transport simulations. Furthermore, the nanotube VFETs fabricated on graphene films can be easily transferred onto flexible plastic substrates. The resulting components are reliable, exhibit high performance, and do not degrade significantly during testing. Abstract : Flexible nanotube vertical field‐effect transistors (VFETs) are fabricated using defect‐free, single crystal ZnO nanotubes grown on graphene films. The fabricated VFET exhibits excellent electrical characteristics, such as a small subthreshold swing of 110 mV dec −1 and a high I max / I min ratio of 10 6 . Furthermore, the nanotube VFETs fabricated on graphene films can be easily transferred onto flexible plastic substrates and maintain high performance.