Cite
HARVARD Citation
Zhou, G. et al. (2018). Coexistence of Negative Differential Resistance and Resistive Switching Memory at Room Temperature in TiOx Modulated by Moisture. Advanced Electronic Materials. p. n/a. [Online].
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Zhou, G. et al. (2018). Coexistence of Negative Differential Resistance and Resistive Switching Memory at Room Temperature in TiOx Modulated by Moisture. Advanced Electronic Materials. p. n/a. [Online].