Effect of Morphological Change on Unipolar and Bipolar Switching Characteristics in Pr0.7Ca0.3MnO3 Based RRAM. Issue 1729 (27th February 2015)

• Record Type: Journal Article
• Authors: Panwar, Neeraj; Kumbhare, Pankaj; Singh, Ajit K.; Venkataramani, N.; Ganguly, Udayan
• Editors: Dimitrakis, P.; Fujisaki, Y.; Hu, G.; Tokumitsu, E.
• Is Part Of: MRS proceedings. Issue 1729:(2015)
• Publication Date: 2015-02-27
• Subjects: laser ablation, -- memory, -- thin film; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.192
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: We have demonstrated that pulsed laser deposition (PLD) conditions, i.e. O2 partial pressure (pO2 ) and temperature (T), enable control over the polarity of resistance switching in PCMO (Pr0.7 C0.3 MnO3 ) i.e. unipolar resistive switching (URS) vs. bipolar resistive switching (BRS). We observe by detailed physical characterization that BRS occurs in poly-crystalline thin films while URS is seen in amorphous films – indicating the materials origin of URS vis-a-vis BRS. BRS shows attractive lower voltage operation, no forming and lower variability than URS.