Cite
HARVARD Citation
Fang, M. et al. (2018). Controlled Growth of Bilayer‐MoS2 Films and MoS2‐Based Field‐Effect Transistor (FET) Performance Optimization. Advanced Electronic Materials. p. n/a. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Fang, M. et al. (2018). Controlled Growth of Bilayer‐MoS2 Films and MoS2‐Based Field‐Effect Transistor (FET) Performance Optimization. Advanced Electronic Materials. p. n/a. [Online].