High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures. Issue 4 (15th January 2018)

• Record Type: Journal Article
• Authors: Yan, Xiao; Zhang, David Wei; Liu, Chunsen; Bao, Wenzhong; Wang, Shuiyuan; Ding, Shijin; Zheng, Gengfeng; Zhou, Peng
• Is Part Of: Advanced science. Volume 5:Issue 4(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-01-15
• Subjects: 2D materials -- bipolar junction transistor -- current amplification -- van der Waals heterostructure; Science -- Periodicals; 505
• DOI: 10.1002/advs.201700830
• Languages: English
• ISSNs: 2198-3844

Abstract

Abstract: 2D layered materials (2DLMs), together with their heterostructures, have been attracting tremendous research interest in recent years because of their unique physical and electrical properties. A variety of circuit elements have been made using mechanically exfoliated 2DLMs recently, including hard drives, detectors, sensors, and complementary metal oxide semiconductor field‐effect transistors. However, 2DLM‐based amplifier circuit elements are rarely studied. Here, the integration of 2DLMs with 3D bulk materials to fabricate vertical junction transistors with current amplification based on a MoS2 /GaTe heterostructure is reported. Vertical junction transistors exhibit the typical current amplification characteristics of conventional bulk bipolar junction transistors while having good current transmission coefficients (α ∼ 0.95) and current gain coefficient (β ∼ 7) at room temperature. The devices provide new attractive prospects in the investigation of 2DLM‐based integrated circuits based on amplifier circuits. Abstract : High performance amplifier element realization by 2D and 3D integration devices are rarely studied for amplifier circuits. Here Vertical junction transistors with current amplification based on a MoS2/GaTe heterostructure is achieved with a good current transmission coefficient α of ≈0.95 and current gain coefficient β of ≈7 at room temperature.