3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs. (1st July 2015)

• Record Type: Journal Article
• Authors: Hernández-Saz, J.; Herrera, M.; Molina, S.I.; Stanley, C.R.; Duguay, S.
• Is Part Of: Scripta materialia. Volume 103(2015)
• Page Start: 73
• Page End: 76
• Publication Date: 2015-07-01
• Subjects: Atom probe tomography -- Semiconductors -- Quantum dots -- Epitaxial growth; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2015.03.013
• Languages: English
• ISSNs: 1359-6462

Abstract

Graphical abstract: Abstract : The 3D compositional distribution at the atomic-scale of InAs/GaAs quantum dots (QDs) with an InAlGaAs capping layer has been obtained by atom probe tomography. A heterogeneous distribution of Al atoms has been revealed. An Al-rich ring around the QDs has been observed. A detailed analysis of the QDs composition evidences a high degree of In/Ga intermixing, with an increasing In gradient in the growth direction. The atomic scale analyses of these nanostructures are essential to understand their functional properties.