Cite
HARVARD Citation
Hsieh, W. et al. (n.d.). Bipolar Ni/ZnO/HfO2/Ni RRAM with multilevel characteristic by different reset bias. Materials science in semiconductor processing. pp. 30-33. [Online].
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Hsieh, W. et al. (n.d.). Bipolar Ni/ZnO/HfO2/Ni RRAM with multilevel characteristic by different reset bias. Materials science in semiconductor processing. pp. 30-33. [Online].