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HARVARD Citation
Poppitz, D. et al. (n.d.). An aberration-corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE. Micron. pp. 1-8. [Online].
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Poppitz, D. et al. (n.d.). An aberration-corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE. Micron. pp. 1-8. [Online].