Cite
HARVARD Citation
Osgnach, P. et al. (2015). The impact of interface states on the mobility and drive current of In0.53Ga0.47As semiconductor n-MOSFETs. Solid-state electronics. pp. 90-96. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Osgnach, P. et al. (2015). The impact of interface states on the mobility and drive current of In0.53Ga0.47As semiconductor n-MOSFETs. Solid-state electronics. pp. 90-96. [Online].