Analytical Modeling of Organic–Inorganic CH3NH3PbI3 Perovskite Resistive Switching and its Application for Neuromorphic Recognition (Adv. Theory Simul. 4/2018). Issue 4 (16th April 2018)

• Record Type: Journal Article
• Authors: Ren, Yanyun; Milo, Valerio; Wang, Zhongqiang; Xu, Haiyang; Ielmini, Daniele; Zhao, Xiaoning; Liu, Yichun
• Is Part Of: Advanced theory and simulations. Volume 1:Issue 4(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-04-16
• Subjects: Science -- Simulation methods -- Periodicals; Science -- Methodology -- Periodicals; Engineering -- Simulation methods -- Periodicals; Engineering -- Methodology -- Periodicals; 507.21
• DOI: 10.1002/adts.201870009
• Languages: English
• ISSNs: 2513-0390

Abstract

Abstract : Analytical models are crucial for building a theoretical basis for optimizing RRAM scheme and implementing its application in neuromorphic computing. In article number1700035, Zhongqiang Wang, Haiyang Xu, Daniele Ielmini, and co‐workers present an analytical model demonstrating the evolution of resistive switching dynamics for CH3 NH3 PbI3 perovskite‐based RRAM. Furthermore, a 2‐layer neuromorphic network with 2‐transistor/1‐resistor synapses is demonstrated. This study paves the way for the use of perovskite‐based RRAM devices for neuromorphic systems.