Cite
HARVARD Citation
Han, Z. et al. (2018). Doping Mechanism of Ge4+ Ions in Ge4+‐Doped TiO2. Physica status solidi. 255 (4), p. n/a. [Online].
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Han, Z. et al. (2018). Doping Mechanism of Ge4+ Ions in Ge4+‐Doped TiO2. Physica status solidi. 255 (4), p. n/a. [Online].