A 16 GS/s 3‐Bit DAC Core in GaN HEMT Technology. Issue 7 (5th February 2018)

• Record Type: Journal Article
• Authors: Kong, Yuechan; Zhang, Min; Zhou, Jianjun; Zhang, Youtao; Zhang, Kai; Peng, Daqing; Li, Chuanhao
• Is Part Of: Physica status solidi. Volume 215:Issue 7(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-02-05
• Subjects: AlGaN/GaN -- digital‐to‐analog converter (DAC) -- high electron mobility transistors (HEMTs) -- mixed‐signal -- ring oscillator; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201700790
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : A robust 0.1‐µm GaN high electron mobility transistor (HEMT) technology is developed for high‐speed mixed‐signal circuits of considerable complexity. The baseline 0.1‐µm depletion‐mode HEMT exhibits a peak cut‐off frequency of 100 GHz and a peak maximum oscillation frequency of 165 GHz. A 501‐stage monolithically integrated enhancement/depletion‐mode ring oscillator incorporating 1006 GaN HEMTs is demonstrated with a low propagation delay of 7.3 ps/stage, verifying the uniformity and high performance of the devices. For the first time, a 16 GS/s 3‐bit digital‐to‐analog converter (DAC) core using GaN technology is implemented. A static output voltage swing as large as 1.5 V is achieved, validating the advantage of GaN technology for use in large‐dynamic‐range circuits. Abstract : A 16GS/s 3‐bit DAC core using a robust 0.1 μm GaN HEMT technology is implemented for the first time. Benefiting from the high‐voltage operation of GaN HEMT, a large static output voltage swing of 1.5 V is achieved, which is remarkably higher than that in Si technology, indicates promising application of the GaN technology for mixed‐signal applications especially when the large dynamic range is required.