Fermi surface variation of Ce 4f-electrons in hybridization controlled heavy-fermion systems. (May 2015)

• Record Type: Journal Article
• Authors: Im, H.J.; Ito, T.; Miyazaki, H.; Kimura, S.; Kwon, Y.S.; Saitoh, Y.; Fujimori, S.-I.; Yasui, A.; Yamagami, H.
• Is Part Of: Solid state communications. Volume 209/210(2015)
• Page Start: 45
• Page End: 48
• Publication Date: 2015-05
• Subjects: A. Strongly correlated electrons systems -- C. Electronic structure -- D. Ce 4f-Fermi surface -- E. Angle-resolved photoemission spectroscopy; Solid state chemistry -- Periodicals; Solid state physics -- Periodicals; Chimie de l'état solide -- Périodiques; Physique de l'état solide -- Périodiques; 530.41
• DOI: 10.1016/j.ssc.2015.03.005
• Languages: English
• ISSNs: 0038-1098

Abstract

Abstract: Ce 3 d –4 f resonant angle-resolved photoemission measurements on CeCoGe 1.2 Si 0.8 and CeCoSi2 have been performed to understand the Fermi surface topology as a function of hybridization strength between Ce 4 f - and conduction electrons in heavy-fermion systems. We directly observe that the hole-like Ce 4 f -Fermi surfaces of CeCoSi2 is smaller than that of CeCoGe 1.2 Si 0.8, indicating the evolution of the Ce 4 f -Fermi surface with the increase of the hybridization strength. In comparison with LDA calculation, the Fermi surface variation cannot be understood even though the overall electronic structure is roughly explained, indicating the importance of strong correlation effects. Abstract : Highlights: Fermi surface topology of CeCoGe1.2 Si0.8 and CeCoSi2 has been investigated by Ce 3 d –4 f resonant ARPES. The ARPES results reveal the evolution of Ce 4 f Fermi surface with the c-f hybridization strength. The strong correlation effects influence on Ce 4 f Fermi surface topology.