Front‐End‐of‐Line Integration of Graphene Oxide for Graphene‐Based Electrical Platforms. Issue 4 (29th January 2018)

• Record Type: Journal Article
• Authors: Lu, Xiaoling; Munief, Walid‐Madhat; Heib, Florian; Schmitt, Michael; Britz, Anette; Grandthyl, Samuel; Müller, Frank; Neurohr, Jens‐Uwe; Jacobs, Karin; Benia, Hadj Mohamed; Lanche, Ruben; Pachauri, Vivek; Hempelmann, Rolf; Ingebrandt, Sven
• Is Part Of: Advanced materials technologies. Volume 3:Issue 4(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-01-29
• Subjects: graphene oxide -- lithography -- reduced graphene oxide -- thin‐film graphene oxide -- wafer‐scale production; Materials science -- Periodicals; Technological innovations -- Periodicals; Materials science; Technological innovations; Periodicals; 620.1105
• DOI: 10.1002/admt.201700318
• Languages: English
• ISSNs: 2365-709X

Abstract

Abstract: Scalable and routine integration of chemically exfoliated, graphene‐based materials such as graphene oxide (GO) and reduced graphene oxide (rGO) into standard microelectronic fabrication is a tremendous technological challenge, blocking their advancement toward real applications. A unique approach for wafer‐scale fabrication of rGO devices by a synergistic combination of chemically exfoliated GO with photolithography processing is realized. Using graphite powder as source material, a GO solution is produced in a newly optimized, low‐temperature exfoliation and desalination protocol, resulting in high‐quality GO and confirmed by various characterization techniques. As substrates, 4 in. Si/SiO2 or glass wafers were first silanized in a well‐controlled, gas‐phase procedure. Large‐area GO thin films are then realized by standard spin‐coating resulting in highly homogeneous, covalently bound layers of controllable thicknesses of 3–7 nm depending on the amount of spin‐coatings. The robust thin films undergo routine photolithography for device fabrication, including reduction via thermal annealing into conductive rGO. The top‐down fabricated rGO devices display high uniformity with electrical resistances varying within only one order of magnitude over wafer‐scale and device yields as high as ≈93% on a wafer. The novel front‐end‐of‐line GO integration protocol offers robust electrical performances for future implementation toward various sensor applications. Abstract : A brand‐new low‐temperature exfoliation with desalination yields graphene oxide (GO) flakes with high‐density functional groups, produced in liter volumes, used for producing thickness‐controlled GO thin films starting from 3 up to 7 nm over silicon and glass wafers. The ensuing GO thin‐film lithography protocol breaks the threshold for wafer‐scale GO integration and sets forth a novel lithography technique for industry‐scale device applications.