Cite
HARVARD Citation
Uedono, A. et al. (2018). Carrier Trapping by Vacancy‐Type Defects in Mg‐Implanted GaN Studied Using Monoenergetic Positron Beams. Physica status solidi. 255 (4), p. n/a. [Online].
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Uedono, A. et al. (2018). Carrier Trapping by Vacancy‐Type Defects in Mg‐Implanted GaN Studied Using Monoenergetic Positron Beams. Physica status solidi. 255 (4), p. n/a. [Online].