30–512 MHz power amplifier design using GaN transistor. Issue 5 (8th April 2018)
- Record Type:
- Journal Article
- Title:
- 30–512 MHz power amplifier design using GaN transistor. Issue 5 (8th April 2018)
- Main Title:
- 30–512 MHz power amplifier design using GaN transistor
- Authors:
- Pisa, Stefano
Chicarella, Simone
Cusani, Roberto
Citrolo, Jerome - Abstract:
- Abstract: In this article a class AB single‐ended power amplifier with 30‐512 MHz frequency band and 100 W saturated output power has been designed and implemented using a GaN transistor. The measured compressed gain is 19 ± 1 dB, the average PAE is 61% and the return loss is always better than −7.5 dB.
- Is Part Of:
- Microwave and optical technology letters. Volume 60:Issue 5(2018:May)
- Journal:
- Microwave and optical technology letters
- Issue:
- Volume 60:Issue 5(2018:May)
- Issue Display:
- Volume 60, Issue 5 (2018)
- Year:
- 2018
- Volume:
- 60
- Issue:
- 5
- Issue Sort Value:
- 2018-0060-0005-0000
- Page Start:
- 1280
- Page End:
- 1286
- Publication Date:
- 2018-04-08
- Subjects:
- GaN transistors -- matching network -- power amplifier -- thermal model
Microwaves -- Periodicals
Optics -- Periodicals
621 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1098-2760 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/mop.31155 ↗
- Languages:
- English
- ISSNs:
- 0895-2477
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5761.071500
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 6307.xml