Wideband dual‐bandpass 0.18‐µm CMOS SPDT switch utilizing dual‐band resonator concept. Issue 5 (8th April 2018)

• Record Type: Journal Article
• Authors: Um, Youngman; Nguyen, Cam
• Is Part Of: Microwave and optical technology letters. Volume 60:Issue 5(2018:May)
• Page Start: 1215
• Page End: 1219
• Publication Date: 2018-04-08
• Subjects: BiCMOS -- CMOS -- dual‐band switch -- dual‐band resonator -- millimeter‐wave -- RFIC -- SPDT switch; Microwaves -- Periodicals; Optics -- Periodicals; 621
• DOI: 10.1002/mop.31132
• Languages: English
• ISSNs: 0895-2477

Abstract

Abstract: A fully integrated wideband concurrent dual‐band single‐pole double‐throw (SPDT) switch with integrated dual‐band band‐pass filtering has been developed over two wide bandwidths around 24 and 60 GHz in a 0.18‐µm SiGe BiCMOS process. The developed concurrent dual‐wideband SPDT switch is configured to make it approximately equivalent to a dual‐band resonator in the on‐state operation. It exhibits measured insertion losses and isolations of 5.4 and 31.4 dB, and 5.2 and 16.5 dB at 24 and 60 GHz, respectively. The measured peak stop‐band rejection between the two pass‐bands is 26 dB at 42.3 GHz. With single‐tone 24‐ or 60‐GHz input, the measured input 1‐dB compression points ( P 1dB ) are 20.4 and 17.1 dBm at 24 and 60 GHz, respectively. For concurrent dual‐tone 24‐ and 60‐GHz input, the measured input P 1dB s are 17 and 14.5 dBm at 24 and 60 GHz, respectively. The measured input third‐order intercept points are 29.4 and 26.8 dBm at 24 and 60 GHz, respectively.