Studies of spin related processes in fullerene C60 devices. Issue 14 (21st February 2018)

• Record Type: Journal Article
• Authors: Liu, Haoliang; Wang, Jingying; Groesbeck, Matthew; Pan, Xin; Zhang, Chuang; Vardeny, Z. Valy
• Is Part Of: Journal of materials chemistry. Volume 6:Issue 14(2018)
• Page Start: 3621
• Page End: 3627
• Publication Date: 2018-02-21
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c7tc05086k
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : We have investigated spin related processes in fullerene C60 devices using a several experimental techniques, which include magnetic field effect of photocurrent and electroluminescence in C60 -based diodes; spin polarized carrier injection in C60 -based spin-valves; and pure spin current generation in NiFe/C60 /Pt trilayer devices. Abstract : We have investigated spin related processes in fullerene C60 devices using several experimental techniques, which include magnetic field effect of photocurrent and electroluminescence in C60 -based diodes; spin polarized carrier injection in C60 -based spin-valves; and pure spin current generation in NiFe/C60 /Pt trilayer devices. We found that the 'curvature-related spin orbit coupling' in C60 plays a dominant role in the obtained spin-related phenomena. The measured magneto-photocurrent and magneto-electroluminescence responses in C60 diodes are dominated by the difference in the g -values of hole and electron polarons in the fullerene molecules. We also obtained giant magneto-resistance of ∼10% at 10 K in C60 spin-valve devices, where spin polarized holes are injected into the C60 interlayer. In addition, using the technique of spin-pumping in NiFe/C60 /Pt trilayer devices with various C60 interlayer thicknesses we determined the spin diffusion length in C60 films to be 13 ± 2 nm at room temperature.