A New Silicon Drift Detector for High Spatial Resolution STEM-XEDS: Performance and Applications. (29th July 2014)

• Record Type: Journal Article
• Authors: Phillips, Patrick J.; Paulauskas, Tadas; Rowlands, Neil; Nicholls, Alan W.; Low, Ke-Bin; Bhadare, Santokh; Klie, Robert F.
• Is Part Of: Microscopy and microanalysis. Volume 20:Number 4(2014:Aug.)
• Page Start: 1046
• Page End: 1052
• Publication Date: 2014-07-29
• Subjects: STEM, -- XEDS, -- atomic resolution, -- silicon drift detector; Microscopy -- Periodicals; Microchemistry -- Periodicals; 502.82
• DOI: 10.1017/S1431927614001639
• Languages: English
• ISSNs: 1431-9276

Abstract

Abstract: A newly designed, 100 mm 2, silicon drift detector has been installed on an aberration-corrected scanning transmission electron microscope equipped with an ultra-high resolution pole piece, without requiring column modifications. With its unique, windowless design, the detector's active region is in close proximity to the sample, resulting in a dramatic increase in count rate, while demonstrating an increased sensitivity to low energy X-rays and a muted tilt dependence. Numerous examples of X-ray energy dispersive spectrometry are presented on relevant materials such as Al x Ga1− x N nanowires, perovskite oxides, and polycrystalline CdTe thin films, across both varying length scales and accelerating voltages.