Silicon nanowire networks for multi-stage thermoelectric modules. (15th May 2015)

• Record Type: Journal Article
• Authors: Norris, Kate J.; Garrett, Matthew P.; Zhang, Junce; Coleman, Elane; Tompa, Gary S.; Kobayashi, Nobuhiko P.
• Is Part Of: Energy conversion and management. Volume 96(2015)
• Page Start: 100
• Page End: 104
• Publication Date: 2015-05-15
• Subjects: Nanowire network -- Plasma Enhanced Chemical Vapor Deposition (PECVD) -- Silicon -- TiN nucleation layer -- Copper substrate; Direct energy conversion -- Periodicals; Energy storage -- Periodicals; Energy transfer -- Periodicals; Énergie -- Conversion directe -- Périodiques; Direct energy conversion; Periodicals; 621.3105
• DOI: 10.1016/j.enconman.2015.02.050
• Languages: English
• ISSNs: 0196-8904

Abstract

Graphical abstract: Highlights: Fabricated flexible single, double, and quadruple stacked Si thermoelectric modules. Measured an enhanced power production of 27%, showing vertical stacking is scalable. Vertically scalable thermoelectric module design of semiconducting nanowires. Design can utilize either p or n-type semiconductors, both types are not required. Δ T increases with thickness therefore power/area can increase as modules are stacked. Abstract: We present the fabrication and characterization of single, double, and quadruple stacked flexible silicon nanowire network based thermoelectric modules. From double to quadruple stacked modules, power production increased 27%, demonstrating that stacking multiple nanowire thermoelectric devices in series is a scalable method to generate power by supplying larger temperature gradient. We present a vertically scalable multi-stage thermoelectric module design using semiconducting nanowires, eliminating the need for both n-type and p-type semiconductors for modules.