Nonvolatile memory devices based on Au/graphene oxide nanocomposites with bilateral multilevel characteristics. (July 2015)

• Record Type: Journal Article
• Authors: Yun, Dong Yeol; Kim, Tae Whan
• Is Part Of: Carbon. Volume 88(2015)
• Page Start: 26
• Page End: 32
• Publication Date: 2015-07
• Subjects: Carbon -- Periodicals; Carbone -- Périodiques; Koolstof; Toepassingen; Electronic journals; 546.681
• DOI: 10.1016/j.carbon.2015.02.061
• Languages: English
• ISSNs: 0008-6223

Abstract

Abstract: Current–voltage measurements on the Al/self-assembled Au nanoparticles inserted in graphene-oxide (GO) layer/indium-tin-oxide/glass devices at 300 K showed bilateral current bistabilities with four current states in a cell. The multilevel behaviors with four current states were obtained by applying different erasing voltages of −6, −12, and −18 V with a writing voltage of 3 V or different erasing voltages of 8, 14, and 18 V with a writing voltage of −5 V. The resistive memory devices demonstrated bilateral multilevel characteristics due to a nanocomposite consisting of Au nanoparticles inserted in a GO layer. The stabilities of the four current states with 1 × 10 −1, 1 × 10 −4, 1 × 10 −6, and 1 × 10 −8 A achieved for the devices by using different erasing voltages were maintained for retention cycles larger than 1 × 10 4 s under a continuous reading test. Memory operating mechanisms and multilevel characteristics based on the I – V curves were described by using the carrier-capture in the self-assembled Au nanoparticles and the local filament-path on the surface between the electrode and the GO layer.