Ambipolar Organic Field‐Effect Transistors Based on a Dual‐Function, Ultrathin and Highly Crystalline 2, 9‐didecyldinaphtho[2, 3‐b:2′, 3′‐f]thieno[3, 2‐b]thiophene (C10‐DNTT) Layer. (11th October 2017)
- Record Type:
- Journal Article
- Title:
- Ambipolar Organic Field‐Effect Transistors Based on a Dual‐Function, Ultrathin and Highly Crystalline 2, 9‐didecyldinaphtho[2, 3‐b:2′, 3′‐f]thieno[3, 2‐b]thiophene (C10‐DNTT) Layer. (11th October 2017)
- Main Title:
- Ambipolar Organic Field‐Effect Transistors Based on a Dual‐Function, Ultrathin and Highly Crystalline 2, 9‐didecyldinaphtho[2, 3‐b:2′, 3′‐f]thieno[3, 2‐b]thiophene (C10‐DNTT) Layer
- Authors:
- Huang, Shuyun
Peng, Boyu
Chan, Paddy Kwok Leung - Abstract:
- Abstract: Ultrathin organic semiconductor thin films have great value in the investigation of carrier transport behavior in organic field‐effect transistors (OFETs). Here, the dual solution shearing (DSS) method is adopted to deposit ultrathin and closely packed 2, 9‐didecyldinaphtho[2, 3‐b:2′, 3′‐f]thieno[3, 2‐b]thiophene (C10 ‐DNTT) films. This smooth, ultrathin and highly crystalline DSS‐processed C10 ‐DNTT layer can be utilized in p–n stacking bilayer ambipolar OFETs. It has two major functions in the bilayer OFET: (i) it acts as the p‐channel active layer; and (ii) it serves as the growth template of the upper n‐type semiconductor layer. The closely packed alkyl side chains of the C10 ‐DNTT molecules behave like long alkyl chains in the self‐assembled monolayer and can assist the packing and orientation of the following layer. The F16 CuPc layer grown on DSS‐processed C10 ‐DNTT shows crystallized lamellae structure. The smooth C10 ‐DNTT surface can suppress the trap states and enhance the charge transfer between the p–n layer interface. The drain‐source current ( I DS ) in the p‐channel and n‐channel shows a threefold and fivefold increase compared with two‐step thermal evaporation. These findings demonstrate the potential of using solution‐processed ultrathin organic semiconductor in multilayer organic electronics, which cannot be easily achieved by the conventional thermal evaporation approach. Abstract : Bilayer ambipolar OFETs based on thermal evaporation andAbstract: Ultrathin organic semiconductor thin films have great value in the investigation of carrier transport behavior in organic field‐effect transistors (OFETs). Here, the dual solution shearing (DSS) method is adopted to deposit ultrathin and closely packed 2, 9‐didecyldinaphtho[2, 3‐b:2′, 3′‐f]thieno[3, 2‐b]thiophene (C10 ‐DNTT) films. This smooth, ultrathin and highly crystalline DSS‐processed C10 ‐DNTT layer can be utilized in p–n stacking bilayer ambipolar OFETs. It has two major functions in the bilayer OFET: (i) it acts as the p‐channel active layer; and (ii) it serves as the growth template of the upper n‐type semiconductor layer. The closely packed alkyl side chains of the C10 ‐DNTT molecules behave like long alkyl chains in the self‐assembled monolayer and can assist the packing and orientation of the following layer. The F16 CuPc layer grown on DSS‐processed C10 ‐DNTT shows crystallized lamellae structure. The smooth C10 ‐DNTT surface can suppress the trap states and enhance the charge transfer between the p–n layer interface. The drain‐source current ( I DS ) in the p‐channel and n‐channel shows a threefold and fivefold increase compared with two‐step thermal evaporation. These findings demonstrate the potential of using solution‐processed ultrathin organic semiconductor in multilayer organic electronics, which cannot be easily achieved by the conventional thermal evaporation approach. Abstract : Bilayer ambipolar OFETs based on thermal evaporation and solution shearing are fabricated. Solution‐processed ultrathin films with densely packed alkyl chains function as the p‐channel active layer and growth template of the upper n‐type semiconductor layer. The bilayer devices show good performance with obvious improvement in electron mobility. … (more)
- Is Part Of:
- Advanced Electronic Materials. Volume 3:Number 12(2017)
- Journal:
- Advanced Electronic Materials
- Issue:
- Volume 3:Number 12(2017)
- Issue Display:
- Volume 3, Issue 12 (2017)
- Year:
- 2017
- Volume:
- 3
- Issue:
- 12
- Issue Sort Value:
- 2017-0003-0012-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2017-10-11
- Subjects:
- ambipolar OFETs -- bilayer thin films -- dual solution shearing -- ultrathin film
Materials -- Electric properties -- Periodicals
Materials science -- Periodicals
Magnetic materials -- Periodicals
Electronic apparatus and appliances -- Periodicals
537 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2199-160X ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/aelm.201700268 ↗
- Languages:
- English
- ISSNs:
- 2199-160X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.848400
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 6198.xml